Intellectual Properties

IP, Reports & Roadmaps | Apr 29, 2017
Toyoda Gosei and OSRAM GmbH enter Agreement concerning LED-related patents
Toyoda Gosei Co., Ltd. (“Toyoda Gosei”) and OSRAM GmbH, Germany (“OSRAM”), entered an agreement to allow the companies (including subsidiaries) to use each other’s patents for specific technologies in Group III-V nitride compound semiconductor light emitting diodes (“LEDs”), which include white LEDs technology. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Three wavelength led structure
Three wavelength led structure A three wavelength light emitting diode (LED) structure utilizes a blue light LED chip and a green light LED chip as light sources, and a red fluorescent layer is used as a light transition layer. By adjusting the number of the blue light LED chip and the green light LED chip and the dosage of the chemical substances in the red fluorescent layer, the present invention can produce a white light LED which is adjustable in color temperature, a neutral color LED whose color is changeable, or can produce a LED whose light color changes with time. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Thin gallium nitride light emitting diode device
Thin gallium nitride light emitting diode device Disclosed is a light emitting diode (LED) device that comprises a crystal structure of a sapphire substrate-free gallium nitride (GaN) LED, wherein the crystal structure is mounted on a first surface of a sub-mount substrate in the form of a unit chip, and the first surface of the sub-mount substrate has a surface area greater than the surface area of a region in which the unit chip is bonded. Preforms for manufacturing the LED device and a method for manufacturing the LED device are also disclosed. The sapphire substrate, on which the crystal structure of the light emitting diode has grown, is processed into a unit chip before being removed. Thus, any crack in the crystal structure of the light emitting diode that may occur during the removal of the sapphire substrate can be prevented. Therefore, a thin light emitting diode device can be manufactured in a mass production system. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
SSC Wins Repeated Attempts to Challenge its White LED Patent
Seoul Semiconductor (KOSDAQ: 046890), one of the eight largest LED manufacturers in the world, announced that on October 11, 2007 the Patent Court of Korea turned down appeals brought by Taiwan-based Advanced Optoelectronic Technology Inc.(AOT) and Korea-based ITSWELL to overturn earlier decisions from the Korean Intellectual Property Tribunal. The Tribunal had rejected patent invalidation actions brought by AOT and ITSWELL against Seoul Semiconductors utility patent for producing white LED. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Side view led package having lead frame structure designed to improve resin flow
Side view led package having lead frame structure designed to improve resin flow The invention relates to a side view LED package in use with an LCD backlight unit. The side view LED package comprises: an LED chip; and a strip-shaped lead frame having a toothed structure formed in a lateral edge thereof. The LED chip is mounted on a surface of the lead frame. An integral package body is made of resin, and includes a hollow front half having a cavity for housing the LED chip and a solid rear half divided from the front half by the lead frame. The toothed structure of the lead frame structure can improve resin flow in order to ensure stability even if the LED package is made extremely thin. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Sharp and Nichia Enter into LED and Laser Diode Patent Cross-Licensing Agreement
Sharp Corporation (head office: Osaka City, Osaka Prefecture; President: Mikio Katayama; below, “Sharp”) and Nichia Corporation (head office: Anan City, Tokushima Prefecture; President: Eiji Ogawa; below, “Nichia”) have entered into a patent cross-licensing agreement covering LEDs (light-emitting diodes) and laser diodes. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
Settlement of Patent Litigation with OSRAM
Citizen Electronics Co., Ltd. with headquarters in Fujiyoshida-city, Yamanashi, Japan and President, Takashi Masuzawa (“CITIZEN ELECTRONICS”), a totally-held subsidiary of Citizen Holdings Co., Ltd. with headquarters in Nishi-Tokyo city, Tokyo, Japan and President Makoto Umehara, reached a settlement with Osram GmbH Munich, Germany and its subsidiary OSRAM Opto Semiconductors GmbH Regensburg, Germany (collectively “OSRAM”) over patent lawsuit and litigation cases that have been running since 2005, and concluded a settlement agreement on July 13, 2007. Read more »
IP, Reports & Roadmaps | Apr 29, 2017
SEOUL SEMICONDUTOR ANSWERS ON NICHIAs PATENT INFRINGEMENT SUIT
Seoul Semiconductor has substantially prevailed at U.S. Design Case. - Found Not Liable for Damages on 3 of 4 Nichia Corporation’s U.S. Design Patents. Seoul Semicondutor files patent infringement suit against Nichia in the US. - It is pertaining to its patent covering all of Nichia's LED products. Read more »
IP, Reports & Roadmaps | Dec 30, 1969
Flip-chip light emitting diode with high light-emitting efficiency
Flip-chip light emitting diode with high light-emitting efficiency A flip-chip light emitting diode with high light-emitting efficiency is disclosed. The LED includes a transparent conductive layer, an oxide layer, a reflective metal layer, a conductive layer, and a protective diffusion layer sequentially disposed over a p-type semiconductor layer. Thereby, light emitting from a light-emitting layer toward the p-type semiconductor layer is reflected and penetrating a transparent substrate and emitting outwards. Thus the problem of light shielded from the flip-chip type LED is solved and the light-emitting efficiency is improved. Furthermore, the present invention disposes the LED chip in a face-down orientation on a conductive substrate by flip-chip technology so as to enhance heat-dissipation efficiency of the LED. Read more »
page_peel